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SAMSUNG Now Producing 20nm-class, 64-gigabit 3-bit NAND Flash Memory

SAMSUNG Now Producing 20nm-class, 64-gigabit 3-bit NAND Flash Memory

Samsung Electronics Co., Ltd., the world leader in advanced memory technology, announced today the industry’s first production of a 3-bit-cell (3bit), 64 gigabit (Gb) NAND flash using 20 nanometer (nm)-class* process technology. The highly advanced new chip can be used in high-density flash solutions such as USB flash drives (UFDs) and Secure Digital (SD) memory cards.

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“Samsung has repeatedly provided the market with leading-edge NAND flash solutions, including the introduction of 30nm-class*, 32Gb 3-bit NAND flash last November,” said Seijin Kim, vice president, Flash Memory Planning/Enabling, Samsung Electronics. “By now entering into full production of 20nm-class 64Gb 3-bit devices, we expect to accelerate adoption of our high-performance NAND solutions that use Toggle DDR technology, for applications that also require high-density NAND.”

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