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DriverHeaven Extreme Member
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Samsung’s 0.10-micron 1Gbit DDR in volume production
Samsung Electronics today announced volume production of its 1Gbit DDR component, the first Intel-validated DDR SDRAM. The high-density 1Gbit DDR SDRAM devices are produced on 12-inch wafers utilizing 0.10-micron process technology.
Samsung’s 1Gbit DDR SDRAM component supports bank configurations of x4/8/16 in a single design and are available in DDR266 and DDR333 speeds. Thirty-six TSOP2 package dies are mounted to comprise a 4GB registered DIMM, the highest capacity available for servers, workstations and supercomputers. Modules of 2GB density for desktops (unbuffered DIMM) and notebooks (SODIMM) are also available. Samsung’s 1Gbit DDR DRAM is being produced at its Line 11, its first 12-inch volume production line. According to Samsung, Gartner Dataquest projects US$900 million in 1Gbit DDR DRAM total sales in the second half of 2003, growing to US$2 billion in 2004 and US$12.1 billion in 2007. ______________________ Source: DigiTimes |
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