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Join Date: May 2002
Location: Atlanta
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Hynix Semiconductor Inc. said it has developed 512Mbit DDR SDRAM manufactured with 0.10-micron technology.
The new 512 Mb DDR SDRAM memory is aimed at PC and server products. The new product is compatible with DDR 266, DDR 333, and DDR 400, the company said. Hynix will implement the integrated design technology and manufacturing process in its plants in Ichon, Choongju, and Eugene, Oregon. Hynix is planning to launch mass production of 512Mb DDR SDRAM by the end of the year. Production of 256Mb and 1Gb DDR SDRAM using 0.10-micron technology will occur in the first half of next year, it said. Read full story HERE |
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