The integration of two core elements does not only benefit processors: Infineon claims it has developed the first dual-die DDR2 memory module to double overall capacity while increasing total height of the device by only 0.1 mm.
The new modules are based on eighteen 2 Gbit DDR2 components, which are created by stacking two 1 Gbit DDR2 SDRAMs. This dual-die approach allowed Infineon to double the current maximum DDR2 capacity from 2 GByte to 4 GByte.
The dual-die solution increases the height of the module only by the thickness of a sheet of letter paper or 0.1 mm for a total device height of 4.1 mm - which is about 40 percent less than the requirements set by the Joint Electronic Device Engineering Council (JEDEC).
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Tom's Hardware
Feb 26, 2005, 11:11 AM
