Samsung have begun mass producing 4Gbit DDR3 chips on the 40nm process node.
On the server side this will allow DIMMs of 32GB density and SODIMMs of 8GB density per module.
“When our 40nm-class DDR3 was first introduced last July, we were well ahead of the curve for high density, high performance DDR3,” said Dong-Soo Jun, executive vice president, memory marketing, Samsung Electronics. “Now, in just seven more months, we have introduced an ultra-low power ‘Green Memory’ – the 4Gb DDR3, which is double the density of its predecessor. At a module density of 16-gigabyte (GB), the 4Gb based module can save 35 percent in power consumption, to support customer requirements for more energy-efficient designs.”
Crucially for servers power consumption has been drastically cut, Samsung state that a 60nm 1GB DDR2 DIMM consumes 210W whilst the latest 40nm 4Gbit DDR3 based DIMMs will consume just 36 watts a saving of 83%.