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Toshiba to Test sub-25nm Flash Memory

Toshiba to Test sub-25nm Flash Memory

Testing for sub-25nm node technology of Flash memory is being planned by Toshiba.

The NAND flash market is about to get another high tech player as Toshiba is readying a line to test the latest technology in NAND flash production. Initially Toshiba will spend $160 million on the production line to compete with players like Samsung and Intel who currently are leading the market with their NAND flash chip devices.

Flash memory is extremely popular currently as it is needed in a host of devices including digital cameras, mobile phones, SSDs and the latest tablets such as the iPad and iSlate.

“Toshiba plans to begin output of NAND chips with circuitry widths in the upper 20 nanometre range soon, while production of chips with circuitry widths in the lower 20 nanometres is slated to start as early as 2012, the Nikkei said.

A Toshiba spokeswoman said the company plans to start commercial production of NAND flash memory chips with circuitry widths somewhere between 20 and 29 nanometres in the second half of 2010, but it has not been decided whether the circuitry will be wider or narrower than 25 nanometres.”

Source: Reuters

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Stuart Davidson

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